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rq1c075un nch 20v 7.5a middle power mosfet datasheet ll outline v dss 20v tsmt8 r ds(on) (max.) 16m i d 7.5a p d 1.5w ll inner circuit ll features 1) low on - resistance. 2) 1.5v drive 3) built-in g-s protection diode. 4) small surface mount package(tsmt8). 5) pb-free lead plating ; rohs compliant ll packaging specifications type packing embossed tape reel size (mm) 180 ll application tape width (mm) 8 switching basic ordering unit (pcs) 3000 taping code tr marking xh ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 20 v continuous drain current i d 7.5 a pulsed drain current i d,pulse *1 30 a gate - source voltage v gss 10 v power dissipation p d *2 1.5 w p d *3 0.7 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *2 - - 83.3 /w r thja *3 - - 178 /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 20 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 29 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 20v, v gs = 0v - - 1 a gate - source leakage current i gss v gs = 10v, v ds = 0v - - 10 a gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 0.3 - 1.0 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -1.6 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = 4.5v, i d = 7.5a - 11 16 m v gs = 2.5v, i d = 7.5a - 14 20 v gs = 1.8v, i d = 3.7a - 17 24 v gs = 1.5v, i d = 1.5a - 20 40 gate input resistance r g f = 1mhz, open drain - 5 - forward transfer admittance |y fs | *4 v ds = 10v, i d = 7.5a 7 - - s *1 pw Q 10s , duty cycle Q 1% *2 mounted on a ceramic board (30300.8mm) *3 mounted on a fr4 (20200.8mm) *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 1400 - pf output capacitance c oss v ds = 10v - 310 - reverse transfer capacitance c rss f = 1mhz - 210 - turn - on delay time t d(on) *4 v dd ? 10v,v gs = 4.5v - 15 - ns rise time t r *4 i d = 3.7a - 50 - turn - off delay time t d(off) *4 r l ? 2.7 - 100 - fall time t f *4 r g = 10 - 85 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? 10v, i d = 7.5a, v gs = 4.5v - 18 - nc gate - source charge q gs *4 - 3.2 - gate - drain charge q gd *4 - 2.9 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1 a body diode pulse current i sp *1 - - 30 a forward voltage v sd *4 v gs = 0v, i s = 7.5a - - 1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic curves fig. 9 gate threshold voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current fig.11 drain current derating curve fig.12 static dr ain - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic curves fig. 1 3 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic curves fig. 1 5 static drain - source on - state resistance vs. drain current (ii) fig.16 static drain - source on - state resistance vs. drain current (lii) fig.17 static drain - source on - state resistance vs. drain current (iv) fig.18 static drain - source on - state resistance vs. drain current (v) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll electrical characteristic curves fig. 1 9 typical capacitance vs. drain - source voltage fig.20 switching characteristics fig.21 dynamic input characteristics fig.22 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll measurement circuits fig. 1-1 switching time measurement circuit fig. 1-2 swi tching waveforms fig. 2-1 gate charge measurement circuit fig. 2-2 ga te charge waveform www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150730 - rev.001 downloaded from: http:///
rq1c075un datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150730 - rev.001 downloaded from: http:///
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